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www.irf.com ? 2009 international rectifier september 26, 2011 ir1168s dual smart rectifier driver ic features secondary-side high speed controller for synchronous rectification in resonant half bridge topologies 200v proprietary ic technology max 500khz switching frequency anti-bounce logic and uvlo protection 4a peak turn off drive current micropower start-up & ultra low quiescent current 10.7v gate drive clamp 70ns turn-off propagation delay wide vcc operating range direct sensing for both synchronous rectifiers minimal component count simple design lead-free typical applications lcd & pdp tv, telecom smps, ac-dc adapters product summary topology llc half-bridge vd 200v v out 10.7v clamped i o+ & i o- (typical) +1a & -4a turn on propagation delay 60ns (typical) turn off propagation delay 70ns (typical) package options 8-lead soic typical connection diagram load sr1 sr2 cdc 1 2 lr c1 c2 rtn vin vd2 5 vs2 6 vs1 3 vcc 2 vd1 4 gnd 7 gate2 8 gate1 1 ir1168 cout rg2 rg1 m1 m2 datasheet no C pd97382 ir1168
ir1168s www.irf.com ? 2009 international rectifier 2 table of contents page description 3 qualification information 4 absolute maximum ratings 5 electrical characteristics 6 functional block diagram 8 input/output pin equivalent circuit diagram 9 lead definitions 10 lead assignments 10 application information and additional details 12 package details 16 tape and reel details 17 part marking information 18 ordering information 19
ir1168s www.irf.com ? 2009 international rectifier 3 description ir1168 is dual smart secondary-side rectifier drive r ic designed to drive two n-channel power mosfets used as synchronous rectifiers in resonant converter applic ations. the ic can control one or more paralleled n mosfets to emulate the behavior of schottky diode rectifier s. the drain to source for each rectifier mosfet vo ltage is sensed differentially to determine the level of the current and the power switch is turned on and off in close proximity of the zero current transition. ruggednes s and noise immunity are accomplished using an adva nced blanking scheme and double-pulse suppression that a llows reliable operation in fixed and variable freq uency applications.
ir1168s www.irf.com ? 2009 international rectifier 4 qualification information ? qualification level industrial ?? comments: this family of ics has passed jedecs industrial qualification. irs consumer qualificat ion level is granted by extension of the higher industrial level . moisture sensitivity level soic8n msl2 ??? 260c (per ipc/jedec j-std-020) esd machine model class b (per jedec standard jesd22-a115) human body model class 2 (per eia/jedec standard eia/jesd22-a114) ic latch-up test class i, level a (per jesd78) rohs compliant yes ? qualification standards can be found at internation al rectifiers web site http://www.irf.com/ ?? higher qualification ratings may be available shoul d the user have such requirements. please contact your international rectifier sales representative f or further information. ??? higher msl ratings may be available for the specifi c package types listed here. please contact your international rectifier sales representative for fu rther information.
ir1168s www.irf.com ? 2009 international rectifier 5 absolute maximum ratings absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. all v oltage parameters are absolute voltages referenced to com, all currents are defined positive into any lead. the thermal resistance and power dissipation ratings are measur ed under board mounted and still air conditions. parameters symbol min. max. units remarks supply voltage v cc -0.3 20 v cont. drain sense voltage v d -3 200 v pulse drain sense voltage v d -5 200 v source sense voltage v s -3 20 v gate voltage v ga te -0.3 20 v v cc =20v, gate off operating junction temperature t j -40 150 c storage temperature t s -55 150 c thermal resistance r q ja 128 c/w soic-8 package power dissipation p d 970 mw soic-8, t amb =25c switching frequency fsw 500 khz
ir1168s www.irf.com ? 2009 international rectifier 6 electrical characteristics the electrical characteristics involve the spread o f values guaranteed within the specified supply vol tage and junction temperature range tj from C 25 c to 125c . typical values represent the median values, which are related to 25c. if not otherwise stated, a supply voltage of v cc = 15 v is assumed for test condition. supply section parameters symbol min. typ. max. units remarks supply voltage operating range v cc 8.6 18 v gbd v cc turn on threshold v cc on 7.5 8.1 8.5 v v cc turn off threshold v cc uvlo 7 7.6 8 v (under voltage lock out) v cc turn on/off hysteresis v cc hyst 0.5 v operating current i cc 14 18 ma c load =1nf, f sw = 400khz 48 60 ma c load =4.7nf, f sw = 400khz quiescent current i qcc 2.6 3.8 ma start-up current i cc start 140 a v cc =v cc on - 0.1v comparator section parameters symbol min. typ. max. units remarks turn-off threshold v th1 -12 -6 0 mv turn-on threshold v th2 -220 -140 -80 mv hysteresis v hyst 141 mv input bias current i ibias1 1 10 a v d = -50mv input bias current i ibias2 10 50 a v d = 200v comparator input offset v offset 2 mv gbd one-shot section parameters symbol min. typ. max. units remarks blanking pulse duration t blank 9 17 25 s reset threshold v th3 2.5 v v cc =10v C gbd 5.4 v v cc =20v C gbd hysteresis v hyst3 40 mv v cc =10v - gbd minimum on time section parameters symbol min. typ. max. units remarks minimum on time t onmin 500 750 1000 ns
ir1168s www.irf.com ? 2009 international rectifier 7 electrical characteristics the electrical characteristics involve the spread o f values guaranteed within the specified supply vol tage and junction temperature range tj from C 25 c to 125c . typical values represent the median values, which are related to 25c. if not otherwise stated, a supply voltage of v cc = 15 v is assumed for test condition. gate driver section parameters symbol min. typ. max. units remarks gate low voltage v glo 0.3 0.5 v i gate = 200ma gate high voltage v gth 8.5 10.7 13.5 v v cc =12v-18v (internally clamped) rise time t r1 10 ns c load = 1nf t r2 80 ns c load = 4.7nf fall time t f1 5 ns c load = 1nf t f2 25 ns c load = 4.7nf turn on propagation delay t don 60 120 ns v ds to v gate -100mv overdrive turn off propagation delay t doff 70 120 ns v ds to v gate -100mv overdrive pull up resistance r up 5 w i gate = 15ma - gbd pull down resistance r down 1.2 w i gate = -200ma output peak current (source) i o source 1 a c load = 1nf - gbd output peak current (sink) i o sink 4 a c load = 1nf - gbd
ir1168s www.irf.com ? 2009 international rectifier 8 functional block diagram
ir1168s www.irf.com ? 2009 international rectifier 9 i/o pin equivalent circuit diagram
ir1168s www.irf.com ? 2009 international rectifier 10 lead definitions pin# symbol description 1 gate1 gate drive output 1 2 vcc supply voltage 3 vs1 sync fet 1 source voltage sense 4 vd1 sync fet 1 drain voltage sense 5 vd2 sync fet 2 drain voltage sense 6 vs2 sync fet 2 source voltage sense 7 gnd analog and power ground 8 gate2 gate drive output 2 lead assignments 4 3 2 1 5 6 7 8 vd2 vd1 gnd gate2 vcc vs1 vs2 gate1
ir1168s www.irf.com ? 2009 international rectifier 11 detailed pin description vcc: power supply this is the supply voltage pin of the ic and it is monitored by the under voltage lockout circuit. it is possible to turn off the ic by pulling this pin below the minimum tu rn off threshold voltage, without damage to the ic. to prevent noise problems, a bypass ceramic capacit or connected to vcc and com should be placed as clo se as possible to the ir1168. this pin is not internally clamped. gnd: ground this is ground potential pin of the integrated cont rol circuit. the internal devices and gate driver are referenced to this point. vd1 and vd2: drain voltage sense these are the two high-voltage pins used to sense t he drain voltage of the two sr power mosfets. rout ing between the drain of the mosfet and the ic pin must be particularly optimized. vs1 and vs2: source voltage sense these are the two differential sense pins for the t wo source pins of the two sr power mosfets. this pi n must not be connected directly to the gnd pin (pin 7) bu t must be used to create a kelvin contact as close as possible to the power mosfet source pin. gate1 and gate2: gate drive outputs these are the two gate drive outputs of the ic. th e gate voltage is internally clamped and has a +1a/ -4a peak drive capability. although this pin can be directly connected to the synchronous rectifier (sr) mosfet gate, the use of gate resistor is recommended (specifically w hen putting multiple mosfets in parallel). care mus t be taken in order to keep the gate loop as short and as smal l as possible in order to achieve optimal switching performance.
ir1168s www.irf.com ? 2009 international rectifier 12 application information and additional details state diagram power on gate inactive uvlo mode vcc < vccon gate inactive i cc = i cc start normal gate active gate pw mot vcc > vccon vcc < vccuvlo uvlo mode: the ic is in the uvlo mode when the vcc pin voltage is below vccuvlo. the uvlo mode is accessible from any other state of operation. in the uvlo state, mo st of the internal circuitry is unbiased and the ic draws a quiescent current of iccstart. the ic remains in the uvlo condition until the volt age on the vcc pin exceeds the vcc turn on threshol d voltage, vcc on. normal mode: the ic enters in normal operating mode once the uvl o voltage has been exceeded. at this point the gate drivers are operating and the ic will draw a maximum of icc from the supply voltage source.
ir1168s www.irf.com ? 2009 international rectifier 13 general description the ir1168 dual smart rectifier controller ic is th e industry first dedicated high-voltage controller ic for synchronous rectification in resonant converter app lications. the ic can emulate the operation of the two secondary rectifier diodes by correctly driving the synchronous rectifier (sr) mosfets in the two seco ndary legs. the core of this device are two high-voltage, high speed comparators which sense the drain to source v oltage of the mosfets differentially. the device current is s ensed using the r dson as a shunt resistance and the gate pin of the mosfet is driven accordingly. dedicated inte rnal logic then manages to turn the power device on and off in close proximity of the zero current transition. ir1168 further simplifies synchronous rectifier con trol by offering the following power management fea tures: -wide vcc operating range allows the ic to be direc tly powered from the converter output -shoot through protection logic that prevents both the gate outputs from the ic to be high at the same time -device turn on and off in close proximity of the z ero current transition with low turn-on and turn-of f propagation delays; eliminates reactive power flow between the output capacitors and power transformer -internally clamped gate driver outputs that signif icantly reduce gate losses. the smartrectifier? control technique is based on s ensing the voltage across the mosfet and comparing it with two negative thresholds to determine the turn on an d off transitions for the device. the rectifier cur rent is sensed by the input comparators using the power mosfet r dson as a shunt resistance and its gate is driven depen ding on the level of the sensed voltage vs. the 3 thresh olds shown below. v gate v th1 v th2 v th3 v ds figure 1: input comparator thresholds turn-on phase when the conduction phase of the sr fet is initiate d, current will start flowing through its body diod e, generating a negative v ds voltage across it. the body diode has generally a much higher voltage drop than the one caused by the mosfet on resistance and therefore will trigger the turn-on threshold v th2 . when v th2 is triggered, ir1168 will drive the gate of mosfet on which will in turn cause the conduction voltage vds to drop down to i d *r dson . this drop is usually accompanied by some amount o f ringing, that could trigger the input comparator to turn off; hence, a fixed minimu m on time (mot) blanking period is used that will m aintain the power mosfet on for a minimum amount of time. the fixed mot limits the minimum conduction time of the secondary rectifiers and hence, the maximum sw itching frequency of the converter. turn-off phase once the sr mosfet has been turned on, it will rema in on until the rectified current will decay to the level where v ds will cross the turn-off threshold v th1 .
ir1168s www.irf.com ? 2009 international rectifier 14 since the device currents are sinusoidal here, the device vds will cross the v th1 threshold with a relatively low dv/dt. once the threshold is crossed, the current w ill start flowing again through the body diode, cau sing the vds voltage to jump negative. depending on the amount o f residual current, vds may once again trigger the turn-on threshold; hence, vth2 is blanked for a time durati on t blank after vth1 is triggered. when the device vds crosses the positive reset threshold vth3, t blank is terminated and the ic is ready for next conduct ion cycle as shown below. gate drive v ds blanking time t1 t2 v th1 v th2 v th3 mot t blank i ds figure 2: secondary currents and voltages
ir1168s www.irf.com ? 2009 international rectifier 15 t vcc vcc on uvlo vcc uvlo normal uvlo figure 3: vcc uvlo 10% 90% t rise v th2 t fall v th1 t doff t don 50% v ds v gate figure 4: timing waveform
ir1168s www.irf.com ? 2009 international rectifier 16 0.01 0.1 1 10 6 v 8 v 10 v 12 v 14 v 16 v 18 v i supply (ma) supply voltage figure 5: supply current vs. supply voltage 7.0 v 7.5 v 8.0 v 8.5 v 9.0 v -50 c 0 c 50 c 100 c 150 c vcc uvlo thresholds temperature vcc on vcc uvlo figure 6: undervoltage lockout vs. temperature 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 -50 c 0 c 50 c 100 c 150 c i cc supply current (ma) temperature i qcc figure 7: icc quiescent currrent vs. temperature 14.1 14.2 14.3 14.4 14.5 14.6 14.7 14.8 14.9 -50 c 0 c 50 c 100 c 150 c i cc supply current (ma) temperature icc @400khz, c load =1nf figure 8: icc supply currrent @1nf load vs. temperature
ir1168s www.irf.com ? 2009 international rectifier 17 -5.2 -5.0 -4.8 -4.6 -4.4 -4.2 -4.0 -3.8 -50 c 0 c 50 c 100 c 150 c v th1 threshold (mv) temperature ch2 ch1 figure 9: v th1 vs. temperature -131.0 -130.0 -129.0 -128.0 -127.0 -126.0 -125.0 -124.0 -50 c 0 c 50 c 100 c 150 c v th2 thresholds (mv) temperature ch2 ch1 figure 10: v th2 vs. temperature -126.0 -125.0 -124.0 -123.0 -122.0 -121.0 -120.0 -119.0 -50 c 0 c 50 c 100 c 150 c comparator hysteresis v hyst (mv) temperature ch2 ch1 figure 11: comparator hysteresis vs. temperature 730 ns 740 ns 750 ns 760 ns 770 ns 780 ns 790 ns 800 ns 810 ns -50 c 0 c 50 c 100 c 150 c minimum on time temperature mot_ch1 mot_ch2 figure 12: mot vs temperature
ir1168s www.irf.com ? 2009 international rectifier 18 35 ns 40 ns 45 ns 50 ns 55 ns 60 ns 65 ns 70 ns -50 c 0 c 50 c 100 c 150 c propagation delay temperature ch1 turn-on propagation delay ch2 turn-on propagation delay figure 13: turn-on propagation delay vs. temperature 35 ns 40 ns 45 ns 50 ns 55 ns 60 ns -50 c 0 c 50 c 100 c 150 c propagation delay temperature ch1 turn-off propagation delay ch2 turn-off propagation delay figure 14: turn-off propagation delay vs. temperature 10.0 v 10.5 v 11.0 v 11.5 v -50 c 0 c 50 c 100 c 150 c gate clamping voltage temperature ch1 vgh@vcc=12v ch2 vgh@vcc=12v ch1 vgh@vcc=18v ch2 vgh@vcc=18v figure 15: gate clamping voltage vs. temperature 5 ns 6 ns 6 ns 7 ns 7 ns 8 ns 8 ns 9 ns 9 ns -50 c 0 c 50 c 100 c 150 c gate tr and tf @ 1nf load temperature tr_ch1 tr_ch2 tf_ch1 tf_ch2 figure 16: gate output tr and tf time @ 1nf load vs. temperature
ir1168s www.irf.com ? 2009 international rectifier 19 package details: soic8n
ir1168s www.irf.com ? 2009 international rectifier 20 tape and reel details: soic8n e f a c d g a b h note : controlling dim ension in m m loaded tape feed direction a h f e g d b c carrier tape dimension for 8soicn code min max min max a 7.90 8.10 0.311 0.318 b 3.90 4.10 0.153 0.161 c 11.70 12.30 0.46 0.484 d 5.45 5.55 0.214 0.218 e 6.30 6.50 0.248 0.255 f 5.10 5.30 0.200 0.208 g 1.50 n/a 0.059 n/a h 1.50 1.60 0.059 0.062 metric imperial reel dimensions for 8soicn code min max min max a 329.60 330.25 12.976 13.001 b 20.95 21.45 0.824 0.844 c 12.80 13.20 0.503 0.519 d 1.95 2.45 0.767 0.096 e 98.00 102.00 3.858 4.015 f n/a 18.40 n/a 0.724 g 14.50 17.10 0.570 0.673 h 12.40 14.40 0.488 0.566 metric imperial
ir1168s www.irf.com ? 2009 international rectifier 21 part marking information
ir1168s www.irf.com ? 2009 international rectifier 22 ordering information base part number package type standard pack complete part number form quantity ir1168 soic8n tube/bulk 95 IR1168SPBF tape and reel 2500 ir1168strpbf the information provided in this document is believ ed to be accurate and reliable. however, internatio nal rectifier assumes no responsibility for the consequences of the use of t his information. international rectifier assumes n o responsibility for any infringement of patents or of other rights of third parties which may result from the use of this info rmation. no license is granted by implication or otherwise under any patent or patent rights of international rectifier. the specificat ions mentioned in this document are subject to change without notice. this document su persedes and replaces all information previously su pplied. for technical support, please contact irs technica l assistance center http://www.irf.com/technical-info/ world headquarters: 233 kansas st., el segundo, california 90245 tel: (310) 252-7105

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